S8550 transistor (pnp) feature power dissipation p cm: 0.625 w (tamb=25 ) collector current i cm: -0.5 a collector-base voltage v (br)cbo : -40 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v(br) cbo ic= -100 a , i e =0 -40 v collector-emitter breakdown voltage v(br) ceo ic= -0.1 ma, i b =0 -25 v emitter-base breakdown voltage v(br) ebo i e = -100 a, i c =0 -5 v collector cut-off current i cbo v cb = -40v, i e =0 -0.1 a collector cut-off current i ceo v ce = -20v, i b =0 -0.1 a emitter cut-off current i ebo v eb = - 3v, i c =0 -0.1 a h fe(1) v ce = -1v, i c = -50ma 85 300 dc current gain h fe(2) v ce = -1v, i c = -500ma 50 collector-emitter saturation voltage v ce (sat) i c =-500ma, i b =-50ma -0.6 v base-emitter saturation voltage v be (sat) i c =-500ma, i b =-50ma -1.2 v transition frequency f t v ce =- 6 v, i c =-20ma f = 30mhz 150 mhz classification of h fe (1) rank b c d range 85-160 120-200 160-300 1 2 3 to-92 1. emitter 2. base 3. collector S8550 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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